PART |
Description |
Maker |
MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MRFG35010ANT1 |
Gallium Arsenide PHEMT
|
Freescale Semiconductor, Inc
|
MRFG35005NT1 MRFG35005MT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale (Motorola) Freescale Semiconductor, Inc 飞思卡尔半导体(中国)有限公司
|
MRFG35002N6AT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35002N6T1 |
GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
Freescale Semiconductor, Inc
|
DGS20-018AS |
Gallium Arsenide Schottky Rectifier 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB From old datasheet system
|
IXYS, Corp. IXYS[IXYS Corporation]
|
DMK3379-000-295-011 DMK3248-000-417-001 |
GALLIUM ARSENIDE, KU BAND, MIXER DIODE GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
GN01021 |
Gallium Arsenide Devices
|
Panasonic
|
GN01022 |
Gallium Arsenide Devices
|
Panasonic
|
GN01068B |
Gallium Arsenide Devices
|
Panasonic
|